UPG139GV Datasheet L-band Dpdt Mmic Switch

Manufacturer: NEC (now Renesas Electronics)

Overview: DATA SHEET GaAs INTEGRATED CIRCUIT µPG139GV L-BAND DPDT MMIC.

Datasheet Details

Part number	UPG139GV
Manufacturer	NEC (now Renesas Electronics)
File Size	52.19 KB
Description	L-BAND DPDT MMIC SWITCH
Datasheet	UPG139GV_NEC.pdf

General Description

The µPG139GV is L-Band Double Pole, Double Throw (DPDT) switch developed for digital cellular or cordless telephone and PCS applications.

This device

Key Features

{ High-Power Switching : Pin(1 dB) = +34 dBm typ. @ANT1, 2-TX, VDD = 3.0 V, VCONT = 3.6 V, f = 100 M to 2 GHz Pin(0.5 dB) = +36 dBm typ. @ANT1, 2-TX, VDD = 5.0 V, VCONT = 5.0 V, f = 100 M to 2 GHz { Low Insertion Loss : Lins1 = 0.70 dB typ. @ANT1, 2-TX, VDD = 3.0 V, VCONT = 3.6 V, f = 1 GHz Lins4 = 0.85 dB typ. @ANT1, 2-RX, VDD = 3.0 V, VCONT = 3.6 V, f = 1 GHz { Small 8-pin SSOP (175 mil) Package.

UPG139GV Distributor & Price

Compare UPG139GV distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.

More Datasheets from NEC (now Renesas Electronics)

Part Number	Description
UPG132G	L-BAND SPDT SWITCH
UPG133G	L-BAND SPDT SWITCH
UPG137GV	L-BAND SPDT SWITCH
UPG138GV	L-BAND SPDT SWITCH
UPG100P	WIDE-BAND AMPLIFIER
UPG101P	WIDE-BAND AMPLIFIER
UPG103B	WIDE-BAND AMPLIFIER
UPG110B	2-8 GHZ WIDE-BAND AMPLIFIER
UPG110P	2 to 8 GHz WIDE-BAND AMPLIFIER
UPG152TA	L-BAND SPDT SWITCH