uPD70F3610
V850ES/FE3-L
32-bit Single-Chip Microcontroller Hardware
µPD70F3610(A) µPD70F3610(A1) µPD70F3610(A2)
µPD70F3611(A) µPD70F3611(A1) µPD70F3611(A2)
µPD70F3612(A) µPD70F3612(A1) µPD70F3612(A2)
µPD70F3613(A) µPD70F3613(A1) µPD70F3613(A2)
µPD70F3614(A) µPD70F3614(A1) µPD70F3614(A2)
Document No. U19190EE1V0DS00 Date Published March 2008
© NEC Electronics 2008 Printed in Germany
V850ES/FE3-L
Notes for CMOS Devices
1. Precaution against ESD for semiconductors Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is remended to avoid using insulators that easily build static electricity. Semiconductor devices must be stored and transported in an anti-static container, static...
