NE500100 Overview
The NE8500199 is a medium power GaAs MESFET designed for up to a 1W output stage or as a driver for higher power devices. The device has no internal matching and can be used at frequencies from UHF to 8.5 GHZ. The device is available in the “99” package or in chip form.
NE500100 Key Features
- HIGH OUTPUT POWER: 1 W
- HIGH LINEAR GAIN: 9.0 dB
- HIGH EFFICIENCY: 37% (PAE)
- INDUSTRY STANDARD PACKAGING
- THIS DEVICE IS ALSO AVAILABLE AS A TWO-CELL CHIP: NE8500100