NE500100
Description
The NE8500199 is a medium power GaAs MESFET designed for up to a 1W output stage or as a driver for higher power devices. The device has no internal matching and can be used at frequencies from UHF to 8.5 GHZ.
Key Features
- HIGH OUTPUT POWER: 1 W
- HIGH LINEAR GAIN: 9.0 dB
- HIGH EFFICIENCY: 37% (PAE)
- INDUSTRY STANDARD PACKAGING
- THIS DEVICE IS ALSO AVAILABLE AS A TWO-CELL CHIP: NE8500100
