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NE500100 - C-Band Medium Power GaAs MESFET

Description

The NE8500199 is a medium power GaAs MESFET designed for up to a 1W output stage or as a driver for higher power devices.

The device has no internal matching and can be used at frequencies from UHF to 8.5 GHZ.

The device is available in the “99” package or in chip form.

Features

  • HIGH OUTPUT POWER: 1 W.
  • HIGH LINEAR GAIN: 9.0 dB.
  • HIGH.

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Datasheet preview – NE500100

Datasheet Details

Part number NE500100
Manufacturer NEC Electronics
File Size 86.97 KB
Description C-Band Medium Power GaAs MESFET
Datasheet download datasheet NE500100 Datasheet
Additional preview pages of the NE500100 datasheet.

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Full PDF Text Transcription

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C-BAND MEDIUM POWER GaAs MESFET NE8500100 NE8500199 FEATURES • HIGH OUTPUT POWER: 1 W • HIGH LINEAR GAIN: 9.0 dB • HIGH EFFICIENCY: 37% (PAE) • INDUSTRY STANDARD PACKAGING • THIS DEVICE IS ALSO AVAILABLE AS A TWO-CELL CHIP: NE8500100 ABSOLUTE MAXIMUM RATINGS1 (TC = 25 °C unless otherwise noted) SYMBOLS VDS VGD VGS IDS IGS PT TCH TSTG PARAMETERS Drain to Source Voltage Gate to Drain Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature UNITS V V V RATINGS 15 -18 -12 IDSS 6.0 6.0 175 -65 to +175 Total Power Dissipation DESCRIPTION The NE8500199 is a medium power GaAs MESFET designed for up to a 1W output stage or as a driver for higher power devices. The device has no internal matching and can be used at frequencies from UHF to 8.5 GHZ.
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