NP80N055CLE Key Features
- Channel temperature 175 degree rated
- Super low on-state resistance RDS(on)1 = 11 m Ω MAX. (VGS = 10 V, I D = 40 A) RDS(on)2 = 13 m Ω MAX. (VGS = 5 V, I D = 4
- Low Ciss : Ciss = 2900 pF TYP
- Built-in gate protection diode
- Part: NP80N055CLE
- Manufacturer: NEC (official site)
- Size: 110.99 KB
Other NP80N055CLE Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
NEC |
NP80N055CHE | Switching N-Channel Power MOSFET |
|
NEC |
NP80N055DHE | Switching N-Channel Power MOSFET |
|
NEC |
NP80N055EHE | Switching N-Channel Power MOSFET |
|
NEC |
NP80N055KHE | Switching N-Channel Power MOSFET |
|
NEC |
NP80N055KLE | N-CHANNEL POWER MOS FET |
NP80N055CLE Description
These products are N-channel MOS Field Effect .. Transistor designed for high current switching ORDERING INFORMATION PART NUMBER NP80N055CLE NP80N055DLE PACKAGE TO-220AB TO-262 TO-263 applications.