UPD78P058Y Description
U11747EJ5V0UM00 (5th edition) Date Published April 1998 N CP (K) © 1992 Printed in Japan [MEMO] 2 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it...