Datasheet4U Logo Datasheet4U.com

P2806BD - N-Channel MOSFET

Download the P2806BD datasheet PDF. This datasheet also covers the P2806BD-NIKO variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (P2806BD-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
P2806BD N-Channel MOSFET UNIKC
P2806BV N-Channel MOSFET UNIKC
P2806AT N-Channel MOSFET UNIKC
P2806ATF N-Channel MOSFET UNIKC
P2806HV N-Channel MOSFET UNIKC

Other Datasheets by NIKO-SEM

Part Number Description
P2806AT N-Channel Transistor
P2806ATF N-Channel Transistor
P2803NVG N-&P-Channel MOSFET
P2804BDG N-Channel MOSFET
P2804BVG N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P2806BD TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 28mΩ ID 30A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS PD Tj, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RθJC Junction-to-Ambient RθJA 1Pulse width limited by maximum junction temperature. TYPICAL 1. GATE 2. DRAIN 3. SOURCE LIMITS ±20 30 19 100 30 43 50 20 -55 to 150 UNITS V A mJ W °C MAXIMUM 2.
Published: |