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P5003QVG - N&P-Channel MOSFET

Download the P5003QVG datasheet PDF. This datasheet also covers the P5003QVG-NIKO variant, as both devices belong to the same n&p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (P5003QVG-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by NIKO-SEM

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P5003QVG SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS N-Channel 30 P-Channel -30 RDS(ON) 27.5m 45m ID 7A -5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Power Dissipation Junction & Storage Temperature Range TC = 25 °C TC = 70 °C TC = 25 °C TC = 70 °C VDS VGS ID IDM PD Tj, Tstg N-Channel P-Channel UNITS 30 -30 V ±20 ±20 V 7 -5 6 -4 A 20 -20 2 W 1.3 -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Ambient RθJA 1Pulse width limited by maximum junction temperature. 2Duty cycle ≤ 1% TYPICAL MAXIMUM 62.