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NIKO-SEM
N-Channel Enhancement Mode
TD422BL
Field Effect Transistor
TO-252 Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 6mΩ
ID 69A
D
G S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current2 Pulsed Drain Current1
TC = 25 °C TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM IAS EAS
PD
Tj, Tstg
1. GATE 2. DRAIN 3. SOURCE
LIMITS ±20 69 45 180 41 84 50 20
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
1Pulse width limited by maximum junction temperature.
TD422BL Datasheet
