* Common Emitter
* PG = 9.0 dB at 2.0 W/470 MHz
* OmnigolcFM Metalization System MAXIMUM RATINGS Ic 0.8 A VCBO 36V VCEO 16V VEBO 4.0V PDISS 1 5 W @ T C = 2 5 °C L -65 °C to +200 °C TSTG -65 °C to +150 °C 9jc 11.6°C/W PACKAGE STYLE .280 4L STUD 45"_s -, IC E
2N5945
NJS
46.15 KB
Npn silicon rf power transistor.
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. i., Ona. 2N5945 TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 NPN SILICON RF POWER.
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