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cSzmi-Conductoi ^Pi
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A.
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Silicon NPN Power Transistor
DESCRIPTION • High Breakdown Voltage-
: VCBO= 1500V (Min) • High Switching Speed • High Reliability
APPLICATIONS • Designed for color TV horizontal output applicaitions
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
1500
V
VOEO Collector-Emitter Voltage
800
V
VEBO Emitter-Base Voltage
6
V
lo
Collector Current- Continuous
2.5
A
ICP
Collector Current-Peak
Collector Power Dissipation
PC
@ TC=25'C
Tj
Junction Temperature
10
A
50
W
150
•c
Tstg
Storage Temperature Range
-55-150 •c
TELEPHONE: (973) 376-2922 (212) 227-6005
FAX: (973) 376-8960
KSD5074
f i 2 :•
pIN 1.BASE 2. COLLECTOR 3.
KSD5074 Datasheet
