KSD5074 Silicon NPN Power Transistor

NJS

Description

cSzmi-Conductoi ^Pi 20 STERN AVE.SPRINGFIELD, NEW JERSEY 07081 U.S.A., {Jnc.Silicon NPN Power Transistor .
High Breakdown Voltage- : VCBO= 1500V (Min). High Switching Speed. High Reliability APPLICATIONS. Designed for c.

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Datasheet Specifications

Part number: KSD5074
Manufacturer: NJS
File Size: 61.63 KB
Datasheet: KSD5074-NewJerseySemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VOEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V lo Collector Current- Continuous 2.5 A ICP Collector

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KSD5074 Silicon NPN Power Transistor NJS

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