KSD5080 Silicon NPN Power Transistor

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Description

J.C/ 20 STERN AVE.SPRINGFIELD, NEW JERSEY 07081 U.S.A., Una.TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Trans.
High Breakdown Voltage- :VCBo=1500V(Min). High Switching Speed. High Reliability. Built-in Damper Diode APPLICAT.

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Datasheet Specifications

Part number: KSD5080
Manufacturer: NJS
File Size: 63.23 KB
Datasheet: KSD5080-NewJerseySemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V Veso Emitter-Base Voltage 6 V Ic Collector Current- Continuous 8 A ICP Collector C

KSD5080 Distributors

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KSD5080 Silicon NPN Power Transistor NJS

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