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KSD5703 Datasheet Silicon NPN Power Transistor

Manufacturer: NJS

Overview: JZII.EU <3£,tni-L,onauctori L/^ioaucti, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A.

General Description

• High Breakdown Voltage- : VCBo=1500V(Min) • High Switching Speed • Low Saturation Voltage TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 KSD5703 • •' .' , 1 j3 PIN 1.BASE 2.

COLLECTOR 3 EMITTER TO-3PO-OIS package APPLICATIONS • Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V Ic Collector Current- Continuous 10 A Ic Collector Current- Pulse Collector Power Dissipation PC @ TC=25°C Tj Junction Temperature Tstg Storage Temperature Range 30 A 70 W 150 °C -55-150 •c •ti U*;

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