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1N5820 - Silicon Rectifier Diodes

Key Features

  • D 3.0 Ampere Operation at TA = +95C.

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Datasheet Details

Part number 1N5820
Manufacturer NTE Electronics (defunct)
File Size 48.15 KB
Description Silicon Rectifier Diodes
Datasheet download datasheet 1N5820 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1N5820, 1N5821, 1N5822 Silicon Rectifier Diodes Schottky Barrier, Fast Switching Features: D 3.0 Ampere Operation at TA = +95C Application: D For Use in Low Voltage, High Frequency Inverters Free Wheeling, and Polarity Protection Applications Maximum Ratings and Electrical Characteristics: (TA = +25C unless otherwise specified) Maximum Repetitive 1N5820 . . . . . Reverse ........ Voltage, ....... .V. R. R. .M. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V 1N5821 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V 1N5822 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .