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2N6028 - Programmable Unijunction Transistor

Description

Designed to enable the engineer to “program” unijunction characteristics such as RBB, , IV, and IP by merely selecting two resistor values.

trigger, oscillator, pulse and timing circuits.

Features

  • D Programmable.
  • RBB, , IV, and IP D Low On.
  • State Voltage.
  • 1.5V Maximum @ IF = 50mA D Low Gate.
  • to.
  • Anode Leakage Current.
  • 10nA Maximum D High Peak Output Voltage.
  • 11V Typical D Low Offset Voltage.
  • 0.35V Typical (RG = 10kW) Absolute Maximum Ratings: (TJ = +25C, Note 1 unless otherwise specified) Power Dissipation, PF.
  • . . . . 300mW.

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Datasheet Details

Part number 2N6028
Manufacturer NTE
File Size 63.05 KB
Description Programmable Unijunction Transistor
Datasheet download datasheet 2N6028 Datasheet
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Full PDF Text Transcription

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2N6028 Programmable Unijunction Transistor Description: Designed to enable the engineer to “program” unijunction characteristics such as RBB, , IV, and IP by merely selecting two resistor values. Applications include thyristor−trigger, oscillator, pulse and timing circuits. This device may also be used in special thyristor applications due to availability of an anode gate. Supplied in an inexpensive TO−92 type plastic package for high−volume requirements, this package is readily adaptable for use in automatic insertion equipment. Features: D Programmable − RBB, , IV, and IP D Low On−State Voltage − 1.5V Maximum @ IF = 50mA D Low Gate−to−Anode Leakage Current − 10nA Maximum D High Peak Output Voltage − 11V Typical D Low Offset Voltage − 0.
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