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NTE

MPSL51 Datasheet Preview

MPSL51 Datasheet

Silicon PNP Transistor

No Preview Available !

MPSL51
Silicon PNP Transistor
High Voltage, General Purpose Amplifier
TO92 Type Package
Absolute Maximum Ratings:
CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
CollectorBase Voltage, VCBE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Total
DDeveircaeteDAisbsoipvaeti+o2n5@CT.A.
=
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+. .2.5..C.,.P. D. .
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625mW
5mW/C
Total
DDeveircaeteDAisbsoipvaeti+o2n5@CT.C.
=
..
+25C,
.......
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. . . . 1.5W
12mW/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55to +150C
Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200C/mW
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +83.3C/mW
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
CollectorEmitter Breakdown Voltage
CollectorBase Breakdown Voltage
EmitterBase Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
IC = 1mA, IB = 0, Note 1
IC = 100A, IE = 0
IE = 10A, IC = 0
VCB = 50V, IE = 0
VEB = 3V, IC = 0
Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle = 2%.
Min Typ Max Unit
100 − − V
100 − − V
4 − −V
− − 1 A
− − 100 nA




NTE

MPSL51 Datasheet Preview

MPSL51 Datasheet

Silicon PNP Transistor

No Preview Available !

Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain
hFE IC = 50mA, VCE = 5V
40 250
CollectorEmitter Saturation Voltage VCE(sat) IC = 10mA, IB = 1mA
− − 0.25 V
IC = 50mA, IB = 5mA
− − 0.30 V
BaseEmitter Saturation Voltage VBE(sat) IC = 10mA, IB = 1mA
− − 1.2 V
SmallSignal Characteristics
IC = 50mA, IB = 5mA
− − 1.2 V
Current Gain Bandwidth Product
fT IC = 10mA, VCE = 10V, f = 20MHz 60 − − MHz
Output Capacitance
Cobo VCB = 10V, IE = 0, f = 1MHz
− − 8 pF
SmallSignal Current Gain
hfe IC = 1mA, VCE = 10V, f = 1kHz
20 − −
Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle = 2%.
.210
(5.33)
Max
.135 (3.45) Min
Seating Plane
.500
(12.7)
Min
.021 (.445) Dia Max
.100 (2.54)
.105 (2.67) Max
.205 (5.2) Max
EBC
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max


Part Number MPSL51
Description Silicon PNP Transistor
Maker NTE
Total Page 2 Pages
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