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NTE23 Silicon NPN Transistor Ultra High Frequency Amp
Description: The NTE23 is suitable for a low noise amplifier in the VHF to UHF band. Features: D Low Noise Figure: NF 3.0dB Typ. @ f = 500MHz D High Power Gain: Gpe 15dB Typ. @ f = 500MHz D High Cutoff Frequency: fT = 2.0GHz Typ Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.