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NTE248 - Silicon Complementary Transistors

This page provides the datasheet information for the NTE248, a member of the NTE247 Silicon Complementary Transistors family.

Description

The NTE247 (NPN) and NTE248 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general purpose amplifier and low

frequency switching applications.

Features

  • D High DC Current Gain: hFE = 3500 Typ @ IC = 5A D Collector.
  • Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA D Monolithic Construction with Built.
  • In Base.
  • Emitter Shunt Resistors Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . 100V Collector.
  • Base Voltage, VCB.

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Datasheet preview – NTE248

Datasheet Details

Part number NTE248
Manufacturer NTE
File Size 26.38 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE248 Datasheet
Additional preview pages of the NTE248 datasheet.

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Full PDF Text Transcription

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NTE247 (NPN) & NTE248 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE247 (NPN) and NTE248 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: D High DC Current Gain: hFE = 3500 Typ @ IC = 5A D Collector–Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA D Monolithic Construction with Built–In Base–Emitter Shunt Resistors Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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