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NTE250 - Silicon Complementary Transistors

Download the NTE250 datasheet PDF. This datasheet also covers the NTE249 variant, as both devices belong to the same silicon complementary transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

The NTE249 (NPN) and NTE250 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in complementary general purpose amplifier applications.

Key Features

  • D High DC Current Gain: hFE = 3500 Typ @ IC = 10A D Monolithic Construction with Built.
  • In Base.
  • Emitter Shunt Resistors Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . 100V Collector.
  • Base Voltage, VCB.
  • . 100V Emitter.
  • Base Voltage, VEB.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NTE249_NTEElectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NTE250
Manufacturer NTE Electronics (defunct)
File Size 25.18 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE250 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
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NTE2003 (NTExxxx) Linear Integrated Circuits NTE Electronics
NTE2004 (NTExxxx) Linear Integrated Circuits NTE Electronics
NTE214 (NTE74xx) Transistor Logic NTE Electronics

Other Datasheets by NTE Electronics (defunct)

Part Number Description
NTE2501 Silicon Complementary Transistors
NTE2502 Silicon Complementary Transistors
NTE2503 Silicon NPN Transistor
NTE2504 Silicon NPN Transistor
NTE2505 Silicon NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NTE249 (NPN) & NTE250 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE249 (NPN) and NTE250 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in complementary general purpose amplifier applications. Features: D High DC Current Gain: hFE = 3500 Typ @ IC = 10A D Monolithic Construction with Built–In Base–Emitter Shunt Resistors Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . .