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NTE250 Datasheet, NTE

NTE250 transistors equivalent, silicon complementary transistors.

NTE250 Avg. rating / M : 1.0 rating-13

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NTE250 Datasheet

Features and benefits

D High DC Current Gain: hFE = 3500 Typ @ IC = 10A D Monolithic Construction with Built
  –In Base
  –Emitter Shunt Resistors Absolute Maximum .

Application

Features: D High DC Current Gain: hFE = 3500 Typ @ IC = 10A D Monolithic Construction with Built
  –In Ba.

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NTE250 Page 1 NTE250 Page 2

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