Datasheet4U Logo Datasheet4U.com

NTE2575 Datasheet - NTE

Complementary Silicon Transistors

NTE2575 Features

* D High Collector Emitter Breakdown Voltage: VCEO = 120V Min D High Gain Bandwidth Product: fT = 400MHz Typ D Low Reverse Transfer Capacitance and Excellent High Frequency Characteristics: NTE2574: Cre = 2.7pF NTE2575: Cre = 4.0pF D Isolated TO220 Type Package Absolute Maximum Ratings: (TC = +25°C

NTE2575 Datasheet (22.06 KB)

Preview of NTE2575 PDF

Datasheet Details

Part number:

NTE2575

Manufacturer:

NTE

File Size:

22.06 KB

Description:

Complementary silicon transistors.

📁 Related Datasheet

NTE2570 Silicon Complementary Transistors (NTE)

NTE2571 Complementary Silicon Transistors (NTE)

NTE2572 Silicon NPN Transistor (NTE)

NTE2574 Silicon Complementary Transistors (NTE)

NTE2576 Silicon Complementary Transistors (NTE)

NTE2577 Complementary Silicon Transistors (NTE)

NTE2578 Silicon NPN Transistor (NTE)

NTE2579 Silicon NPN Transistor (NTE)

NTE25 Silicon Complementary Transistors (NTE)

NTE250 Silicon Complementary Transistors (NTE)

TAGS

NTE2575 Complementary Silicon Transistors NTE

Image Gallery

NTE2575 Datasheet Preview Page 2

NTE2575 Distributor