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NTE262 - Silicon Complementary Transistors Darlington Power Amplifier

Download the NTE262 datasheet PDF. This datasheet also covers the NTE261 variant, as both devices belong to the same silicon complementary transistors darlington power amplifier family and are provided as variant models within a single manufacturer datasheet.

General Description

The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low

speed switching applications.

Key Features

  • D High DC Current Gain: hFE = 2500 Typ @ IC = 4A D Collector.
  • Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA D Low Collector.
  • Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 3A = 4V Max @ IC = 5A D Monolithic Construction with Built.
  • In Base.
  • Emitter Shunt Resistor Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . 100V Collector.
  • Base.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NTE261_NTEElectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NTE262
Manufacturer NTE Electronics (defunct)
File Size 24.86 KB
Description Silicon Complementary Transistors Darlington Power Amplifier
Datasheet download datasheet NTE262 Datasheet

📁 Similar Datasheet

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Other Datasheets by NTE Electronics (defunct)

Part Number Description
NTE26 Silicon NPN Transistor
NTE261 Silicon Complementary Transistors
NTE263 Silicon Complementary Transistors
NTE2631 Integrated Circuit Quad Differential Line Driver
NTE2632 Integrated Circuit Quad Differential Line Receiver

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NTE261 (NPN) & NTE262 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications. Features: D High DC Current Gain: hFE = 2500 Typ @ IC = 4A D Collector–Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA D Low Collector–Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 3A = 4V Max @ IC = 5A D Monolithic Construction with Built–In Base–Emitter Shunt Resistor Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Base Voltage, VCB . . . . . . . . . . . .