NTE2903 - N-Channel MOSFET

Datasheet Details

D Low Drain.
Source ON Resistance: RDS(ON) = 1.35 Typ D High Forward Transfer Admittance: |yfs| = 3.5S Typ D Low Leakage Current: IDSS = 100A (VDS = 500V) D Enhancement Mode: Vth = 2.0 to 4.0V (VDS = 10V, ID = 1mA) G S Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Drain.
Source Voltage, VDSS.
. 500V Drain.
Gate Voltage (RGS = 20k), VDGR.

📁 NTE2903 Similar Datasheet

NTE2996 - N-Channel MOSFET (NTE Electronics)
NTE2000 - (NTExxxx) Linear Integrated Circuits (NTE Electronics)
NTE2001 - (NTExxxx) Linear Integrated Circuits (NTE Electronics)
NTE2003 - (NTExxxx) Linear Integrated Circuits (NTE Electronics)
NTE2004 - (NTExxxx) Linear Integrated Circuits (NTE Electronics)
NTE214 - (NTE74xx) Transistor Logic (NTE Electronics)
NTE2393 - N-Channel MOSFET (INCHANGE)
NTE2661 - Silicon NPN Transistor Horizontal Deflection Output (NTE Electronics)

Other Datasheets by NTE

Published: Jan 23, 2020 |