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NTE2925 - N-Channel MOSFET

Features

  • D Low Drain.
  • Source ON Resistance: RDS(ON) = 1.35 Typ. D High Forward Transfer Admittance: |Yfs| = 5.0S Typ. D Low Leakage Current: IDSS = 100A Max. (VDS = 640V) D Enhancement.
  • Model: Vth = 2.0V to 4.0V (VDS = 10V, ID = 1mA) G S Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Drain.
  • Source Voltage, VDSS.
  • . 800V Drain.
  • Gate Voltage (RGS =.

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Datasheet Details

Part number NTE2925
Manufacturer NTE
File Size 67.58 KB
Description N-Channel MOSFET
Datasheet download datasheet NTE2925 Datasheet
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Full PDF Text Transcription

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NTE2925 MOSFET N−Ch, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package D Features: D Low Drain−Source ON Resistance: RDS(ON) = 1.35 Typ. D High Forward Transfer Admittance: |Yfs| = 5.0S Typ. D Low Leakage Current: IDSS = 100A Max. (VDS = 640V) D Enhancement−Model: Vth = 2.0V to 4.0V (VDS = 10V, ID = 1mA) G S Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Drain−Gate Voltage (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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