NTE2925 - N-Channel MOSFET

Datasheet Details

D Low Drain.
Source ON Resistance: RDS(ON) = 1.35 Typ. D High Forward Transfer Admittance: |Yfs| = 5.0S Typ. D Low Leakage Current: IDSS = 100A Max. (VDS = 640V) D Enhancement.
Model: Vth = 2.0V to 4.0V (VDS = 10V, ID = 1mA) G S Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Drain.
Source Voltage, VDSS.
. 800V Drain.
Gate Voltage (RGS =.

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Published: Jan 23, 2020 |