NTE2925 Datasheet | NTE Electronics

Features : D Low Drain- Source ON Resistance: RDS(ON) = 1.35 Typ. D High Forward Transfer Admittance: |Yfs| = 5.0S Typ. D Low Leakage Current: IDSS = 100A Max. (VDS = 640V) D Enhancement- Model: Vth = 2.0V to 4.0V (VDS = 10V, ID = 1m A) Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified) Drain- Source Voltage, VDSS - - - - - - - - - - - . 800V Drain- Gate Voltage (RGS = 20k), VDGR - - - - - - - - - 800V Gate- Source Voltage, VGSS - - - - - - - - - - - . . 30 Drain Current (Note DC - . . . 2), ... I.D. . . . . . . . . ....