NTE2929 - N-Channel MOSFET

Datasheet Details

D Low Drain.
Source ON Resistance: RDS(on) = 2.3W Typ D High Forward Transfer Admittance: |Yfs| = 4.4S Typ D Low Leakage Current: IDSS = 100mA Max (VDS = 720V) D Enhancement Mode: Vth = 2.0 to 4.0V (VDS = 10V, ID = 1mA).

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Published: Jan 23, 2020 |