NTE2998 - P-Channel MOSFET

Datasheet Details

D High Speed Switching D High Voltage D High Energy Rating D Enhancement Mode D Integral Protection Diode G D S Absolute Maximum Ratings: (TC = +25 C unless otherwise specified) Drain.
Source Voltage, VDSX.
. 200V Gate.
Source Voltage, VGSS.
. m14V Continuous Drain Current, ID.

📁 NTE2998 Similar Datasheet

NTE2996 - N-Channel MOSFET (NTE Electronics)
NTE2000 - (NTExxxx) Linear Integrated Circuits (NTE Electronics)
NTE2001 - (NTExxxx) Linear Integrated Circuits (NTE Electronics)
NTE2003 - (NTExxxx) Linear Integrated Circuits (NTE Electronics)
NTE2004 - (NTExxxx) Linear Integrated Circuits (NTE Electronics)
NTE214 - (NTE74xx) Transistor Logic (NTE Electronics)
NTE2393 - N-Channel MOSFET (INCHANGE)
NTE2661 - Silicon NPN Transistor Horizontal Deflection Output (NTE Electronics)

Other Datasheets by NTE

Published: Jan 23, 2020 |