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NTE317 - Silicon NPN Transistor

Description

The NTE317 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communications.

This device utilizes improved metallization systems to achieve extreme ruggedness under severe operating conditions.

Features

  • D 70W Minimum with Greater than 13.5dB Gain D Withstands Severe Mismatch under Operating Conditions D Emitter Ballasted D Low Inductance Stripline Package Absolute Maximum Ratings: Collector Base Voltage, VCBO.
  • . 36V Collector.
  • Emitter Voltage, VCEO.
  • . . . . 18V Emitter.
  • Base Voltage, VEBO.

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Datasheet preview – NTE317

Datasheet Details

Part number NTE317
Manufacturer NTE
File Size 23.21 KB
Description Silicon NPN Transistor
Datasheet download datasheet NTE317 Datasheet
Additional preview pages of the NTE317 datasheet.

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Full PDF Text Transcription

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NTE317 Silicon NPN Transistor RF Power Output Description: The NTE317 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes improved metallization systems to achieve extreme ruggedness under severe operating conditions. Features: D 70W Minimum with Greater than 13.5dB Gain D Withstands Severe Mismatch under Operating Conditions D Emitter Ballasted D Low Inductance Stripline Package Absolute Maximum Ratings: Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V Emitter–Base Voltage, VEBO . . . . . . .
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