This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | NTE332 |
|---|---|
| Datasheet | NTE332 NTE331 Datasheet (PDF) |
| File Size | 21.42 KB |
| Manufacturer | NTE Electronics (defunct) |
| Description | Silicon Complementary Transistors |
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The NTE331 (NPN) and NTE332 (PNP) are silicon epitaxial base plementary power transistors in a TO 220 plastic package intended for use in power linear and switching applications. Collector Base Voltage (IE = 0), VCBO . 100V Collector Emitter Voltage (IB = 0), VCEO.
See all NTE Electronics (defunct) datasheets
| Part Number | Description |
|---|---|
| NTE3320 | Insulated Gate Bipolar Transistor |
| NTE3321 | Insulated Gate Bipolar Transistor |
| NTE3322 | Insulated Gate Bipolar Transistor |
| NTE3323 | Insulated Gate Bipolar Transistor |
| NTE330 | Germanium PNP Transistor |
| NTE3300 | Insulated Gate Bipolar Transistor |
| NTE3301 | Insulated Gate Bipolar Transistor |
| NTE3302 | Insulated Gate Bipolar Transistor |
| NTE3303 | Insulated Gate Bipolar Transistor |
| NTE331 | Silicon Complementary Transistors |
