Datasheet Details
| Part number | NTE339 |
|---|---|
| Manufacturer | NTE Electronics (defunct) |
| File Size | 147.16 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
 NTE339 Datasheet
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| Part number | NTE339 |
|---|---|
| Manufacturer | NTE Electronics (defunct) |
| File Size | 147.16 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
NTE339 Datasheet
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: The NTE339 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for use in large− signal amplifier stages in industrial communications equipment operating at frequencies to 80MHz.
D Specified 12.5 Volt, 50MHz Characteristics Output Power = 40 Watts Minimum Gain = 7.5dB Efficiency = 50% Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector−Base Voltage, VCBO .
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NTE339 Silicon NPN Transistor RF Power Output.
| Part Number | Description |
|---|---|
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| NTE3300 | Insulated Gate Bipolar Transistor |
| NTE3301 | Insulated Gate Bipolar Transistor |
| NTE3302 | Insulated Gate Bipolar Transistor |
| NTE3303 | Insulated Gate Bipolar Transistor |
| NTE331 | Silicon Complementary Transistors |
| NTE3310 | Insulated Gate Bipolar Transistor |
| NTE3311 | Insulated Gate Bipolar Transistor |
| NTE3312 | Insulated Gate Bipolar Transistor |
| NTE332 | Silicon Complementary Transistors |