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NTE

NTE339 Datasheet Preview

NTE339 Datasheet

Silicon NPN Transistor

No Preview Available !

NTE339
Silicon NPN Transistor
RF Power Output
Description:
The NTE339 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for use in large
signal amplifier stages in industrial communications equipment operating at frequencies to 80MHz.
D Specified 12.5 Volt, 50MHz Characteristics
Output Power = 40 Watts
Minimum Gain = 7.5dB
Efficiency = 50%
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48V
CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24V
EmitterBase Voltage, VEBO 4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A
Total
DDeveircaeteDAisbsoipvaeti2o5n°(CTC.
=
..
.+.2.5.°.C.).,.P. t.o.t
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. . . . 100W
571mW/°C
Operating Junction Temperature, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C
Storage Temperatures Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +150°C
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.55°C/W
Note 1. This device is designed for RF operation. The total device dissipation rating applies only
when the device is operated as an RF amplifier.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
CollectorEmitter Breakdown Voltage
EmitterBase Breakdown Voltage
Collector Cutoff Current
ON Characteristics
V(BR)CEO
V(BR)CES
V(BR)EBO
ICBO
ICES
IC = 200mA, IB = 0, Note 2
IC = 100mA, VBE = 0, Note 2
IC = 0, IE = 10mA
VCB = 15V, IE = 0
VCB = 15V, IE = 0, TA = +125°C
24 − − V
48 − − V
4 − −V
− − 1.0 mA
− − 10 mA
DC Current Gain
Dynamic Characteristics
hFE VCE = 5V, IC = 2.4A
37
Output Capacitance
Functional Test
Cob VCB = 12.5V, IE = 0, f = 0.1 to 1.0MHz 180 230 pF
CommonEmitter Amplifier Power Gain
Collector Efficiency
GPE POUT = 40W, VCC = 12.5V, f = 50MHz 7.5
η 50
dB
%
Note 2. Pulsed through 25mH inductor.
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NTE

NTE339 Datasheet Preview

NTE339 Datasheet

Silicon NPN Transistor

No Preview Available !

.525 (13.35)
1.065 (27.05) Max
.225
(5.72)
C
45°
E
E
.112 (2.85)
.090 (2.28)
B
.395 (10.05)
.500 (12.7) Dia
.260 (6.6)
.420 (10.66) Dia
1032 NC3A
Wrench Flat
.075 (1.9)
.115 (2.92)


Part Number NTE339
Description Silicon NPN Transistor
Maker NTE
Total Page 2 Pages
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