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NTE Electronics

NTE455 Datasheet Preview

NTE455 Datasheet

N-Channel Silicon Dual-Gate MOS Field Effect Transistor

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NTE455
NChannel Silicon DualGate MOS Field Effect Transistor
(MOSFET)
Description:
The NTE455 is an NChannel silicon dualgate MOSFET designed for use as an RF amplifier in UHF
TV tuners. This device is especially recommended for use in half wave length resonator type tuners.
Features:
D Low Reverse Transfer Capacitance: Crss = 0.02pF Typ
D High Power Gain: Gps = 18dB Typ
D Low Noise Figure: NF = 3.8dB Typ
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
DrainSource Voltage, VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Gate1Source Voltage, VG1S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10V
Gate2Source Voltage, VG2S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10V
Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA
Total Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Maximum Channel Temperature, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +125°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
ZeroGate Voltage Drain Current
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Power Gain
Noise Figure
GateSource Cutoff Voltage
Gate Reverse Current
DrainSource Breakdown Voltage
IDSS
|Yfs|
Ciss
Coss
Crss
Gps
NF
VG1S(off)
VG2S(off)
IG1SS
IG2SS
BVDSX
VDS = 10V, VG2S = 4V, VG1S = 0
VDS = 10V, VG2S = 4V, ID = 10mA, f = 1kHz
VDS = 10V, VG2S = 4V, ID = 10mA, f = 1MHz
VDS = 10V, VG2S = 4V, ID = 10mA, f = 1MHz
VDS = 10V, VG2S = 4V, ID = 10mA, f = 1MHz
VDS = 10V, VG2S = 4V, ID = 10mA, f = 900MHz
VDS = 10V, VG2S = 4V, ID = 10mA, f = 900MHz
VDS = 10V, VG2S = 4V, ID = 10µA
VDS = 0, VG1S = ±10V, VG2S = 0
VDS = 0, VG2S = ±10V, VG1S = 0
VG1S = VG2S = 2V, ID = 10µA
Min Typ Max Unit
0.5 8.0 mA
18 22 ms
1.5 2.0 3.5 pF
0.5 1.1 1.5 pF
0.02 0.03 pF
15 18 22 dB
3.8 5.5 dB
− − 2.0 V
− − −0.7 V
− − ±20 nA
− − ±20 nA
20 24 V




NTE Electronics

NTE455 Datasheet Preview

NTE455 Datasheet

N-Channel Silicon Dual-Gate MOS Field Effect Transistor

No Preview Available !

G2
G1
D
.157 (4.0)
Typ
.098 (2.5) Max
.039 (1.0)
S
.393 (10.0)
Min
.027 (0.70)
.007 (0.20) Typ
.157 (4.0) Dia Max


Part Number NTE455
Description N-Channel Silicon Dual-Gate MOS Field Effect Transistor
Maker NTE Electronics
Total Page 2 Pages
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