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NTE455 Datasheet N-Channel Silicon Dual-Gate MOS Field Effect Transistor

Manufacturer: NTE Electronics (defunct)

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Datasheet Details

Part number NTE455
Manufacturer NTE Electronics (defunct)
File Size 105.34 KB
Description N-Channel Silicon Dual-Gate MOS Field Effect Transistor
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General Description

: The NTE455 is an N−Channel silicon dual−gate MOSFET designed for use as an RF amplifier in UHF TV tuners.

This device is especially recommended for use in half wave length resonator type tuners.

Overview

www.DataSheet4U.com NTE455 N−Channel Silicon Dual−Gate MOS Field Effect Transistor.

Key Features

  • D Low Reverse Transfer Capacitance: Crss = 0.02pF Typ D High Power Gain: Gps = 18dB Typ D Low Noise Figure: NF = 3.8dB Typ Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Drain.
  • Source Voltage, VDSX.
  • . . 20V Gate1.
  • Source Voltage, VG1S.
  • ±10V Gate2.
  • Source Voltage,.

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