D Single +5V Operation (±10%) D Maximum Access Time: 150ns D Low Power Dissipation: 302.5mW Max (Active) 22mW Max (Standby) D Three State Data Output D Early
&n.
The NTE6664 is a 65,536 Bit, high
–speed, dynamic Random Access Memory. Organized as 65,536 one
–bit words and fabricated using HMOS high
–performance N
–Channel silicon
–gat.
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