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PHK12NQ03LT
N-channel TrenchMOS™ logic level FET
M3D315 Rev. 02 — 02 March 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
1.2 Features
s Low on-state resistance
s Fast switching.
1.3 Applications
s DC-to-DC converters
s Portable equipment applications.
1.4 Quick reference data
s VDS ≤ 30 V s Ptot ≤ 2.5 W
s ID ≤ 11.8 A s RDSon ≤ 14 mΩ
2. Pinning information
Table 1: Pin 1,2,3 4 5,6,7,8
Pinning - SOT96-1 (SO8), simplified outline and symbol
Description
Simplified outline
source (s) gate (g)
85
drain (d)
3.
12NQ03LT Datasheet
