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2N7002P
60 V, 360 mA N-channel Trench MOSFET
Rev. 02 — 29 July 2010 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
AEC-Q101 qualified Logic-level compatible Trench MOSFET technology Very fast switching
1.3 Applications
High-speed line driver Low-side loadswitch Relay driver Switching circuits
1.4 Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 500 mA; Tj = 25 °C; pulsed; tp ≤ 300 µs; δ ≤ 0.
2N7002P Datasheet
