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74ABTH16245B - 16-bit bus transceiver

Download the 74ABTH16245B datasheet PDF. This datasheet also covers the 74ABT variant, as both devices belong to the same 16-bit bus transceiver family and are provided as variant models within a single manufacturer datasheet.

Description

The 74ABT16245B high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive.

The 74ABT16245B device is a dual octal transceiver featuring non-inverting 3-State bus compatible outputs in both send and receive directions.

Features

  • 16-bit bidirectional bus interface.
  • Power-up 3-State.
  • Multiple VCC and GND pins minimize switching noise.
  • 3-State buffers.
  • Output capability: +64 mA/.
  • 32mA.
  • Latch.
  • up protection exceeds 500mA per JEDEC Std 17.
  • Live insertion/extraction permitted.
  • ESD protection exceeds 2000 V per MIL STD 883 Method 3015 and 200V per Machine Model.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (74ABT-16245B.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
INTEGRATED CIRCUITS 74ABT16245B 74ABTH16245B 16-bit bus transceiver (3-state) Product specification Supersedes data of 1996 Nov 20 IC23 Data Handbook 1998 Feb 25 Philips Semiconductors Philips Semiconductors Product specification 16-bit bus transceiver (3-State) 74ABT16245B 74ABTH16245B FEATURES • 16-bit bidirectional bus interface • Power-up 3-State • Multiple VCC and GND pins minimize switching noise • 3-State buffers • Output capability: +64 mA/–32mA • Latch–up protection exceeds 500mA per JEDEC Std 17 • Live insertion/extraction permitted • ESD protection exceeds 2000 V per MIL STD 883 Method 3015 and 200V per Machine Model DESCRIPTION The 74ABT16245B high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive.
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