Philips Semiconductors
2-input NAND gate
Product specification
74AHC1G00; 74AHCT1G00
FEATURES
• Symmetrical output impedance
• High noise immunity
• ESD protection:
HBM EIA/JESD22-A114-A
exceeds 2000 V
MM EIA/JESD22-A115-A
exceeds 200 V
• Low power dissipation
• Balanced propagation delays
• Very small 5-pin package
• Output capability: standard.
DESCRIPTION
The 74AHC1G/AHCT1G00 is a
high-speed Si-gate CMOS device.
The 74AHC1G/AHCT1G00 provides
the 2-input NAND function.
FUNCTION TABLE
See note 1.
INPUTS
inA inB
LL
LH
HL
HH
OUTPUT
outY
H
H
H
L
Note
1. H = HIGH voltage level.
L = LOW voltage level.
QUICK REFERENCE DATA
GND = 0 V; Tamb = 25 °C; tr = tf ≤ 3.0 ns.
SYMBOL
PARAMETER
TYPICAL
CONDITIONS
UNIT
AHC1G AHCT1G
tPHL/tPLH propagation delay CL = 15 pF 3.5 3.6 ns
inA, inB to outY
VCC = 5 V
CI input capacitance
1.5 1.5 pF
CPD power dissipation notes 1 and 2; 17 18 pF
capacitance
CL = 50 pF;
f = 1 MHz
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi + (CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V.
2. The condition is VI = GND to VCC.
PINNING
PIN
1
2
3
4
5
SYMBOL
inB
inA
GND
outY
VCC
DESCRIPTION
data input
data input
ground (0 V)
data output
DC supply voltage
ORDERING AND PACKAGE INFORMATION
TYPE NUMBER
74AHC1G00GW
74AHCT1G00GW
TEMPERATURE
RANGE
−40 to +85 °C
PINS
5
5
PACKAGES
PACKAGE
SC-88A
SC-88A
MATERIAL
plastic
plastic
CODE
SOT353
SOT353
MARKING
AA
CA
1999 Jan 27
2
