74AHC1G06
FEATURES
- High noise immunity
- ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V
- Low power dissipation
- SOT353 package
- Output capability standard (open drain). DESCRIPTION
74AHC1G06; 74AHCT1G06
The 74AHC1G/AHCT1G06 is a high-speed Si-gate CMOS device. The 74AHC1G/AHCT1G06 provides the inverting buffer. The output of the 74AHC1G/AHCT1G06 devices is an open drain and can be connected to other open-drain outputs to implement active-LOW, wired-OR or active-HIGH wired-AND functions. For digital operation this device must have a pull-up resistor to establish a logic HIGH-level.
QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 3.0 ns. TYPICAL SYMBOL t PZL t PLZ CI CPD Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi + (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in p F; VCC = supply voltage...
