74AHC1G66
FEATURES
- Very low ON-resistance:
- 26 Ω (typical) at VCC = 3.0 V
- 16 Ω (typical) at VCC = 4.5 V
- 14 Ω (typical) at VCC = 5.5 V.
- ESD protection:
- HBM EIA/JESD22-A114-A exceeds 2000 V
- MM EIA/JESD22-A115-A exceeds 200 V
- CDM EIA/JESD22-C101 exceeds 1000 V.
- High noise immunity
- Low power dissipation
- Balanced propagation delays
- SOT353 and SOT753 package
- Output capability: non standard
- Specified from
- 40 to +125 °C. QUICK REFERENCE DATA Ground = 0 V; Tamb = 25 °C; tr = tf ≤ 3 ns.
74AHC1G66; 74AHCT1G66
DESCRIPTION
The 74AHC1G/AHCT1G66 is a high-speed Si-gate CMOS device. The 74AHC1G/AHCT1G66 provides an analog switch. The switch has two input/output pins (Y and Z) and an active HIGH enable input pin (E). When pin E is LOW, the analog switch is turned off.
TYPICAL SYMBOL t PZH/t PZL t PHZ/t PLZ CI CPD CS Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi + ((CL + CS) × VCC2 × fo) where: fi = input frequency in MHz; fo = output...
