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74AHC2G00 Datasheet

The 74AHC2G/AHCT2G00 is a high-speed Si-gate CMOS device

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INTEGRATED CIRCUITS
DATA SHEET
74AHC2G00; 74AHCT2G00
2-input NAND gate
Product specification
2004 Jan 21


NXP Semiconductors Electronic Components Datasheet

74AHC2G00 Datasheet

The 74AHC2G/AHCT2G00 is a high-speed Si-gate CMOS device

No Preview Available !

Philips Semiconductors
2-input NAND gate
Product specification
74AHC2G00; 74AHCT2G00
FEATURES
Symmetrical output impedance
High noise immunity
ESD protection:
– HBM EIA/JESD22-A114-A exceeds 2000 V
– MM EIA/JESD22-A115-A exceeds 200 V
– CDM EIA/JESD22-C101 exceeds 500 V.
Low power dissipation
Balanced propagation delays
SOT505-2 and SOT765-1 package
Specified from 40 to +85 °C and 40 to +125 °C.
DESCRIPTION
The 74AHC2G/AHCT2G00 is a high-speed Si-gate CMOS
device.
The 74AHC2G/AHCT2G00 provides the 2-input NAND
gate function.
QUICK REFERENCE DATA
GND = 0 V; Tamb = 25 °C; tr = tf 3.0 ns.
SYMBOL
PARAMETER
CONDITIONS
tPHL/tPLH
CI
CPD
propagation delay nA and nB to nY
input capacitance
power dissipation capacitance per
gate
CL = 15 pF; VCC = 5 V
CL = 50 pF; f = 1 MHz;
notes 1 and 2
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
N = total load switching outputs;
Σ(CL × VCC2 × fo) = sum of the outputs.
2. The condition is VI = GND to VCC.
TYPICAL
AHC2G
3.5
1.5
17
AHCT2G
3.6
1.5
18
UNIT
ns
pF
pF
2004 Jan 21
2


Part Number 74AHC2G00
Description The 74AHC2G/AHCT2G00 is a high-speed Si-gate CMOS device
Maker NXP
Total Page 17 Pages
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