A2G35S200-01SR3
Features
- High Terminal Impedances for Optimal Broadband Performance
- Designed for Digital Predistortion Error Correction Systems
- Optimized for Doherty Applications
A2G35S200--01SR3
3400- 3600 MHz, 40 W AVG., 48 V AIRFAST RF POWER Ga N TRANSISTOR
NI--400S--2S
RFin/VGS 2
1 RFout/VDS
(Top View)
Figure 1. Pin Connections
Freescale Semiconductor, Inc., 2016. All rights reserved.
RF Device Data Freescale Semiconductor, Inc.
A2G35S200--01SR3 1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage Gate--Source Voltage Operating Voltage Maximum Forward Gate Current @ TC = 25C Storage Temperature Range Case Operating Temperature Range Operating Junction Temperature Range Absolute Maximum Junction Temperature (1)
Table 2. Thermal Characteristics
VDSS
Vdc
- 8, 0
Vdc
0 to +55
Vdc
IGMAX
25 m A
Tstg
- 65 to +150
C
- 55 to +150
C
- 55 to...
