* High Terminal Impedances for Optimal Broadband Performance
* Designed for Digital Predistortion Error Correction Systems
* Optimized for Doherty Applications A2G35S200
* 01SR3 3400
* 3600 MHz, 40 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR NI
* 400S
* 2S RFi
A2G35S200-01SR3 Datasheet (330.12 KB)
A2G35S200-01SR3
330.12 KB
Rf power gan transistor.
Freescale Semiconductor Technical Data Document Number: A2G35S200 01S Rev. 0, 5/2016 RF Power GaN Transistor This 40 W RF power GaN transis.
📁 Related Datasheet
A20 Processor (Allwinner Technology)
A200-D90 brake of motor / BRAKE PACK / (A100-D45) (NISSEI)
A2002 2.00mm Pitch Wire to Board Connector (HR)
A2002 Silicon PNP Epitaxial Type (IDC)
A2002-T 2.00mm Pitch Wire to Board Connector (HR)
A2002H 2.00mm Pitch Wire to Board Connector (HR)
A2002WR 2.00mm Pitch Wire to Board Connector (HR)
A2002WV 2.00mm Pitch Wire to Board Connector (HR)
A2003 (A20xx) High Voltage High Current Darlington Arrays (Allegro MicroSystems)
A2004 (A20xx) High Voltage High Current Darlington Arrays (Allegro MicroSystems)
