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A2G35S200-01SR3 Datasheet

RF Power GaN Transistor

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Freescale Semiconductor
Technical Data
Document Number: A2G35S200--01S
Rev. 0, 5/2016
RF Power GaN Transistor
This 40 W RF power GaN transistor is designed for cellular base station
applications requiring very wide instantaneous bandwidth covering the
frequency range of 3400 to 3600 MHz.
This part is characterized and performance is guaranteed for applications
operating in the 3400 to 3600 MHz band. There is no guarantee of performance
when this part is used in applications designed outside of these frequencies.
3500 MHz
Typical Single--Carrier W--CDMA Performance: VDD = 48 Vdc,
IDQ = 291 mA, Pout = 40 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Frequency
Gps
(dB)
D
Output PAR ACPR
(%)
(dB)
(dBc)
IRL
(dB)
3400 MHz
14.7
32.4
7.2
–34.9
–10
3500 MHz
16.1
35.3
7.0
–34.7
–19
3600 MHz
16.1
36.7
6.6
–32.8
–9
Features
High Terminal Impedances for Optimal Broadband Performance
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
A2G35S200--01SR3
3400–3600 MHz, 40 W AVG., 48 V
AIRFAST RF POWER GaN
TRANSISTOR
NI--400S--2S
RFin/VGS 2
1 RFout/VDS
(Top View)
Figure 1. Pin Connections
Freescale Semiconductor, Inc., 2016. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
A2G35S200--01SR3
1


NXP Semiconductors Electronic Components Datasheet

A2G35S200-01SR3 Datasheet

RF Power GaN Transistor

No Preview Available !

Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Maximum Forward Gate Current @ TC = 25C
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature Range
Absolute Maximum Junction Temperature (1)
Table 2. Thermal Characteristics
VDSS
125
Vdc
VGS
–8, 0
Vdc
VDD
0 to +55
Vdc
IGMAX
25
mA
Tstg
– 65 to +150
C
TC
– 55 to +150
C
TJ
– 55 to +225
C
TMAX
275
C
Characteristic
Thermal Resistance by Infrared Measurement, Active Die Surface--to--Case
Case Temperature 75C, PD = 81 W
Thermal Resistance by Finite Element Analysis, Junction--to--Case
Case Temperature 85C, PD = 80 W
Symbol
RJC (IR)
RJC (FEA)
Value
1.3 (2)
1.75 (3)
Unit
C/W
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
1B
A
IV
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain--Source Breakdown Voltage
(VGS = –8 Vdc, ID = 24.3 mAdc)
V(BR)DSS
150
Vdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 24.3 mAdc)
VGS(th)
–3.8
–2.8
–2.3
Vdc
Gate Quiescent Voltage
(VDD = 48 Vdc, ID = 291 mAdc, Measured in Functional Test)
VGS(Q)
–3.6
–3.1
–2.3
Vdc
Gate--Source Leakage Current
(VDS = 0 Vdc, VGS = –5 Vdc)
IGSS
–7.5
mAdc
1. Functional operation above 225C has not been characterized and is not implied. Operation at TMAX (275C) reduces median time to failure
by an order of magnitude; operation beyond TMAX could cause permanent damage.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
3. RJC (FEA) must be used for purposes related to reliability and limitations on maximum junction temperature. MTTF may be estimated by
the expression MTTF (hours) = 10[A + B/(T + 273)], where T is the junction temperature in degrees Celsius, A = –10.3 and B = 8260.
(continued)
A2G35S200--01SR3
2
RF Device Data
Freescale Semiconductor, Inc.


Part Number A2G35S200-01SR3
Description RF Power GaN Transistor
Maker NXP
Total Page 3 Pages
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