| Title | RF Mosfet N채널 |
| Description | NXP Semiconductors Technical Data Document Number: A2T21H100- 25S Rev. 1, 01/2022 RF Power LDMOS Transistor N- Channel Enhancement- Mode Lateral MOSFET This 18 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz. 2100 MHz Typical Doherty Single- Carrier W- CDMA Performance: VDD = 28 Vdc, IDQA = 2... |
| Features |
Advanced High Performance In- Package Doherty Greater Negative Gate- Source Voltage Range for Improved Class C Operation Designed for Digital Predistortion Error Correction Systems A2T21H100- 25SR3 2110 –2170 MHz, 18 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTOR NI- 780S- 4L4S N.C. 1 Carrier RFinA/VGSA 2 8 VBWA(1) 7 RFoutA/VDSA RFinB/VGSB... |
| Datasheet |
 A2T21H100-25SR3 Datasheet - 432.89KB |
| Distributor |
DigiKey |
| Stock | 0 In stock |
| Price |
250 units: 118887.7 KRW
|
| BuyNow |
 BuyNow - Manufacturer a NXP Semiconductors A2T21H100-25SR3
|
| Distributor | Stock | Price | BuyNow |
|---|---|---|---|
DigiKey |
250 units: 118887.7 KRW |
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|
 Quest Components |
125 units: 77.895 USD 61 units: 80.4915 USD 1 units: 103.86 USD |
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|
 Richardson RFPD |
250 units: 84.03 USD |
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|
 Avnet Americas |
25000 units: 77.83666 USD 2500 units: 80.34752 USD 2000 units: 82.23067 USD 1500 units: 84.11381 USD 1000 units: 85.36924 USD 500 units: 87.8801 USD 250 units: 89.76325 USD |
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 Avnet Silica |
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 EBV Elektronik |
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 Flip Electronics |
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