A2T21H100-25SR3 - RF Power LDMOS Transistor

NXP Semiconductors

Datasheet Details

Part number	A2T21H100-25SR3
Manufacturer	NXP Semiconductors
File Size	432.89 KB
Description	RF Power LDMOS Transistor
Datasheet	A2T21H100-25SR3 Datasheet

Overview

NXP Semiconductors Technical Data Document Number: A2T21H100- 25S Rev.

1, 01/2022 RF Power LDMOS Transistor N- Channel Enhancement- Mode Lateral MOSFET This 18 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.

2100 MHz  Typical Doherty Single- Carrier W- CDMA Performance: VDD = 28 Vdc, IDQA = 250 mA, VGSB = 0.2 Vdc, Pout = 18 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Key Features

Advanced High Performance In- Package Doherty.
Greater Negative Gate- Source Voltage Range for Improved Class C Operation.
Designed for Digital Predistortion Error Correction Systems A2T21H100- 25SR3 2110.
2170 MHz, 18 W AVG. , 28 V.

More Datasheets from NXP Semiconductors

Part Number	Description