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NXP Semiconductors Electronic Components Datasheet

AFRX5G372 Datasheet

RF Front-End Receiver

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NXP Semiconductors
Technical Data
Document Number: AFRX5G372
Rev. 0, 05/2020
RF Front--End Receiver Module
AFRX5G372
The AFRX5G372 is an integrated multi--chip module designed for TD--LTE
and 5G mMIMO applications. It consists of a T/R switch, a two--stage low noise
amplifier and support circuitry to work from a 5 V supply and a 1.8 V logic--level
T/R control.
The device has Tx and Rx modes, which are controlled via T/R logic signaling.
In Tx mode, internal RF switches direct the signal from the antenna port to an
external termination resistor. In Rx mode, internal RF switches direct the signal
from the antenna port to internal LNAs. While in Tx mode, the LNA is in idle
mode with minimized current consumption.
3300–5000 MHz, 34 dB, 1.4 dB NF
AIRFAST RX MODULE
Features
Frequency: 3300–5000 MHz
Rx mode (3300–4200 MHz)
– Gain: 34.0 dB
– IIP3: –2 dBm
– NF: 1.4 dB
6.2 mm 6.2 mm Module
Rx mode (4400–5000 MHz)
– Gain: 34.0 dB
– IIP3: –4 dBm
– NF: 1.6 dB
Tx mode
– Robustness short--term incidents: 39.0 dBm (Avg.), 47.0 dBm (Peak)
– Robustness indefinitely incidents: 37.0 dBm (Avg.), 45.0 dBm (Peak)
ANT port return loss:
– Rx mode: –18 dB
– Tx mode: –18 dB
Reverse isolation: 60 dB
Insertion loss ANT to Tx/TERM port: –0.85 dB
1.8 V logic JEDEC--compliant control interface
5 V supply
Power consumption:
– Rx mode: 500 mW
– Tx mode: 75 mW
50 ohm operation with no external matching
Compact 6.2 mm 6.2 mm LGA package, which is compatible with QFN 6 6 footprint
2020 NXP B.V.
RF Device Data
NXP Semiconductors
AFRX5G372
1


NXP Semiconductors Electronic Components Datasheet

AFRX5G372 Datasheet

RF Front-End Receiver

No Preview Available !

GND
ANT
GND
GND
GND
GND Tx/TERM GND
T/R
GND
100 k
VDD
INTERFACE
GND
Rxout
GND
GND
GND
N.C.
GND
VDD
GND
GND aaa--034448
Figure 1. Functional Block Diagram
Table 1. Maximum Ratings
Rating
Operating Voltage
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature (1)
Input Power (Rx mode, Pavg, CW)
Input Power (Tx mode, 10 sec. Duration, 10 MHz LTE, 8 db PAR)
Table 2. ESD Protection Characteristics
Test Methodology
Human Body Model (per JS--001--2017)
Charge Device Model (per JS--002--2014)
Table 3. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
1. Continuous use at maximum temperature will affect MTTF.
Symbol
VDD
Tstg
TC
TJ
Pin
Pin
Value
5.25
–65 to +150
–40 to +105
150
20
39.0
Class
2
C3
Rating
3
Package Peak Temperature
260
Unit
Vdc
C
C
C
dBm
dBm
Unit
C
AFRX5G372
2
RF Device Data
NXP Semiconductors


Part Number AFRX5G372
Description RF Front-End Receiver
Maker NXP
Total Page 3 Pages
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