AFV10700GS, AFV10700H - RF Power LDMOS Transistors

NXP

AFV10700GS Product details

Internally input and output matched for broadband operation and ease of use.
Device can be used in a single.
ended, push.
pull or quadrature configuration.
Qualified up to a maximum of 55 VDD operation.
High ruggedness, handles > 20:1 VSWR.
Integrated ESD protection with greater negative gate.
source voltage range for improved Class C operation and gate voltage pulsing.
Recommended drivers: MRFE6VS25N (25 W) or MRF6V10010N (10 W).
Included in NXP product longevity program with assured supply for a minimum of 15 years after launch Document Number: AFV10700H Rev. 2, 08/2019 AFV10700H AFV10700HS AFV10700GS 960.
1215 MHz, 700 W PEAK, 52 V AIRFAST RF POWER LDMOS TRANSISTORS NI.
780H.
4L AFV10700H NI.
780S.

Part number: AFV10700GS, AFV10700H
Manufacturer: NXP ↗
File Size: 2.39 MB
Datasheet: AFV10700H-NXP.pdf
Description: RF Power LDMOS Transistors
Note: This datasheet PDF includes multiple part numbers: AFV10700GS, AFV10700H.
Please refer to the document for exact specifications by model.

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