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AFV10700GS - RF Power LDMOS Transistors

Download the AFV10700GS datasheet PDF. This datasheet also covers the AFV10700H variant, as both devices belong to the same rf power ldmos transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Internally input and output matched for broadband operation and ease of use.
  • Device can be used in a single--ended, push--pull or quadrature configuration.
  • Qualified up to a maximum of 55 VDD operation.
  • High ruggedness, handles > 20:1 VSWR.
  • Integrated ESD protection with greater negative gate--source voltage range for improved Class C operation and gate voltage pulsing.
  • Recommended drivers: MRFE6VS25N (25 W) or MRF6V10010N (10 W).
  • Included in NXP product longe.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFV10700H-NXP.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NXP Semiconductors Technical Data RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These RF power transistors are designed for pulse applications operating at 960 to 1215 MHz. These devices are suitable for use in defense and commercial pulse applications with large duty cycles and long pulses, such as IFF, secondary surveillance radars, ADS--B transponders, DME and other complex pulse chains. Typical Performance: In 1030–1090 MHz reference circuit, IDQ(A+B) = 100 mA Frequency (MHz) (1) Signal Type VDD Pout Gps D (V) (W) (dB) (%) 1030 1090 1030 1090 Pulse (128 sec, 10% Duty Cycle) 50 800 Peak 17.5 52.1 700 Peak 19.0 56.1 52 850 Peak 17.5 51.7 770 Peak 19.2 56.