• Part: AFV10700GS
  • Description: RF Power LDMOS Transistors
  • Manufacturer: NXP Semiconductors
  • Size: 2.39 MB
Download AFV10700GS Datasheet PDF
NXP Semiconductors
AFV10700GS
AFV10700GS is RF Power LDMOS Transistors manufactured by NXP Semiconductors.
- Part of the AFV10700H comparator family.
NXP Semiconductors Technical Data RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These RF power transistors are designed for pulse applications operating at 960 to 1215 MHz. These devices are suitable for use in defense and mercial pulse applications with large duty cycles and long pulses, such as IFF, secondary surveillance radars, ADS--B transponders, DME and other plex pulse chains. Typical Performance: In 1030- 1090 MHz reference circuit, IDQ(A+B) = 100 mA Frequency (MHz) (1) Signal Type Pout Gps D (V) (W) (dB) (%) 1030 1090 1030 1090 Pulse (128 sec, 10% Duty Cycle) 800 Peak 700 Peak 850...