BA220 Datasheet | NXP Semiconductors

FEATURES - Hermetically sealed leaded glass SOD27 (DO-35) package - High switching speed: max. 4 ns - General application - Continuous reverse voltage: max. 10 V - Repetitive peak reverse voltage: max. 10 V - Repetitive peak forward current: max. 400 m A. The diode is type branded. handbook, halfpage k DESCRIPTION The BA220 is a high-speed switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) package. a MAM246 APPLICATIONS - High-speed switching. Fig.1 Simplified outline (SOD27; DO-35) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 100 µs t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed circuit-board; lead length 10 mm. total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 - - - - - 65 - 9 3 1 350 +200 200 A A A m W °C °C see Fig.2; note 1 CONDITIONS MIN. - - - - MAX. 10 10 200 400 V V m A m A UNIT 1996 Sep 03 Philips Semiconductors Product specification High-speed diode ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VF PARAMETER forward voltage see Fig.3 IF = 0.1 m A IF = 1 m A IF = 5 m A IF = 10 m A IF = 100 m A IR reverse current see Fig.5 VR = 10 V VR = 10 V; Tj = 150 °C Cd trr diode capacitance reverse recovery time f = 1 MHz; VR = 0; see Fig.6 when switched from IF = 10 m A to IR = 60 m A; RL = 100 Ω; measured at IR = 1 m A; see Fig.7 when switched from IF = 400 m A; tr = 30 ns; see Fig.8 - - - - 1.5 50 2.5 4 460 560 640 680 825 520 620 700 750 950 CONDITIONS MIN. MAX. UNIT m V m V m V m V m V µA µA p F ns Vfr forward recovery voltage - 2.0 THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on a...