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NXP Semiconductors Electronic Components Datasheet

BAT85 Datasheet

Schottky barrier single diode

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BAT85
Schottky barrier single diode
24 July 2012
Product data sheet
1. Product profile
1.1 General description
Planar Schottky barrier diode with an integrated guard ring for stress protection,
encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) package. The diode
is suitable for mounting on a 2 E (5.08 mm) pitch.
1.2 Features and benefits
Low forward voltage
Guard ring protected
Hermetically-sealed leaded glass package
1.3 Applications
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes
1.4 Quick reference data
Table 1.
Symbol
IF(AV)
VR
VF
Quick reference data
Parameter
average forward
current
reverse voltage
forward voltage
Conditions
δ ≤ 0.5 ; f = 20 kHz; PCB mounting,
lead length = 4 mm; half sine wave
IF = 10 mA; Tamb = 25 °C
Min Typ Max Unit
- - 200 mA
- - 30 V
- - 400 mV
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 K cathode
2 A anode
Simplified outline
k
a
DO-34 (SOD68)
Graphic symbol
KA
aaa-003679
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NXP Semiconductors Electronic Components Datasheet

BAT85 Datasheet

Schottky barrier single diode

No Preview Available !

NXP Semiconductors
BAT85
Schottky barrier single diode
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
BAT85
DO-34
Description
hermetically sealed glass package; axial leaded; 2 leads
Version
SOD68
4. Marking
Table 4. Marking codes
Type number
BAT85
Marking code
marking band
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VR reverse voltage
IF forward current
IF(AV)
average forward current
δ ≤ 0.5 ; f = 20 kHz; PCB mounting,
lead length = 4 mm; half sine wave
IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5
IFSM
non-repetitive peak forward
tp ≤ 10 ms; Tj(init) = 25 °C
current
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
Min Max Unit
- 30 V
- 200 mA
- 200 mA
- 300 mA
- 5A
- 125 °C
-65 125 °C
-65 150 °C
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
Conditions
in free air
Min Typ Max Unit
[1] - - 320 K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
BAT85
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 July 2012
© NXP B.V. 2012. All rights reserved
2/8


Part Number BAT85
Description Schottky barrier single diode
Maker NXP
Total Page 8 Pages
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