Philips Semiconductors
PNP power transistor
FEATURES
• High current (max. 1.5 A)
• Low voltage (max. 80 V).
APPLICATIONS
• Driver stages in television circuits.
DESCRIPTION
PNP power transistor in a TO-126; SOT32 plastic
package. NPN complement: BD230.
Product specification
BD231
PINNING
PIN
1
2
3
DESCRIPTION
emitter
collector, connected to metal part of
mounting surface
base
handbook, halfpage
2
3
1
1 2 3 Top view
MAM272
Fig.1 Simplified outline (TO-126; SOT32)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tmb ≤ 62 °C
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
−100
−80
−5
−1.5
−3
−1
12.5
+150
150
+150
UNIT
V
V
V
A
A
A
W
°C
°C
°C
1999 Apr 21
2
