BDX45 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BDX45; BDX47 PNP Darlington transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 02 Philips Semiconductors Product specification PNP Darlington transistors Features - High current (max. 1 A) - Low voltage (max. 80 V) - Integrated diode and resistor. APPLICATIONS - Industrial switching applications such as: - print hammers handbook, halfpage BDX45; BDX47 PINNING PIN 1 2 3 emitter collector, connected to metal part of mounting surface base DESCRIPTION - solenoids - relay and lamp drivers. DESCRIPTION PNP Darlington transistor in a TO-126; SOT32 plastic package. NPN plements: BDX42 and BDX44. 1 2 3 Top view 1 2 3 MAM350 Fig.1 Simplified outline (TO-126; SOT32) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BDX45 BDX47 VCES collector-emitter voltage BDX45 BDX47 IC Ptot h FE f T collector current (DC) total power dissipation DC current gain transition frequency Tamb ≤ 25 °C Tmb ≤ 100 °C IC = - 150 m A; VCE = - 10 V IC = - 500 m A; VCE = - 10 V IC = - 500 m A; VCE = - 5 V; f = 100 MHz VBE = 0 - -...