BF245 Datasheet | NXP Semiconductors

FEATURES - Interchangeability of drain and source connections - Frequencies up to 700 MHz. APPLICATIONS - LF, HF and DC amplifiers. PINNING PIN 1 2 3 SYMBOL DESCRIPTION d drain s source g gate DESCRIPTION General purpose N-channel symmetrical junction field-effect transistors in a plastic TO-92 variant package. 1 handbook, halfpage2 3 d g s CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. MAM257 Fig.1 Simplified outline (TO-92 variant) and symbol. QUICK REFERENCE DATA SYMBOL VDS VGSoff VGSO IDSS Ptot yfs PARAMETER drain-source voltage gate-source cut-off voltage gate-source voltage drain current BF245A BF245B BF245C total power dissipation forward transfer admittance Crs reverse transfer capacitance CONDITIONS ID = 10 n A; VDS = 15 V open drain VDS = 15 V; VGS = 0 Tamb = 75 C VDS = 15 V; VGS = 0; f = 1 k Hz; Tamb = 25 C VDS = 20 V; VGS = - 1 V; f = 1 MHz; Tamb = 25 C MIN. - - 0.25 - TYP. - - - MAX. 30 - 8 - 30 UNIT V V V - 6 - 12 - - -...