BFR106
DESCRIPTION
NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is primarily intended for low noise, general RF applications.
PINNING
PIN DESCRIPTION
Code: R7p
1 base 2 emitter 3 collector lfpage
1 Top view
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO VCEO IC Ptot h FE f T collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency
GUM maximum unilateral power gain
Vo output voltage
CONDITIONS open emitter open base up to Ts = 70 C; note 1 IC = 50 m A; VCE = 9 V; Tamb = 25 C IC = 50 m A; VCE = 9 V; f = 500 MHz; Tamb = 25 C IC = 30 m A; VCE = 6 V; f = 800 MHz; Tamb = 25 C IC = 50 m A; VCE = 9 V; RL = 75 ; Tamb = 25 C; dim =
- 60 d B; f(pq- r) = 793.25 MHz
MIN.
- -
- - 25
- -
- TYP.
- -
- - 80 5
MAX. 20 15 100 500
- -
- -
UNIT V V m A m W
GHz d B m V
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS...
