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BFU530X Datasheet - NXP

NPN wideband silicon RF transistor

BFU530X Features

* Low noise, high breakdown RF transistor

* AEC-Q101 qualified

* Minimum noise figure (NFmin) = 0.7 dB at 900 MHz

* Maximum stable gain 22 dB at 900 MHz

* 11 GHz fT silicon technology 1.3 Applications

* Applications requiring high supply voltages and high breakdown voltages

BFU530X Datasheet (234.22 KB)

Preview of BFU530X PDF

Datasheet Details

Part number:

BFU530X

Manufacturer:

NXP ↗

File Size:

234.22 KB

Description:

Npn wideband silicon rf transistor.

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BFU530X NPN wideband silicon transistor NXP

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