BFU790F
description
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
This device is sensitive to Electro Static Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards.
1.2 Features and benefits
- Low noise high linearity microwave transistor
- 110 GHz f T silicon germanium technology
- High maximum output power at 1 d B pression 20 d Bm at 1.8 GHz
1.3 Applications
- High linearity applications
- Medium output power applications
- Wi-Fi / WLAN / Wi MAX
- Zig Bee
- LTE, cellular, UMTS
NXP Semiconductors
NPN wideband silicon germanium RF transistor
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VCBO VCEO VEBO IC Ptot h FE collector-base voltage collector-emitter voltage emitter-base voltage collector current total power dissipation DC current...
