BFU790F Overview
Key Features
- Low noise high linearity microwave transistor
- 110 GHz fT silicon germanium technology
- High maximum output power at 1 dB compression 20 dBm at 1.8 GHz 1.3 Applications
- High linearity applications
- Medium output power applications
- Wi-Fi / WLAN / WiMAX
- LTE, cellular, UMTS NXP Semiconductors BFU790F NPN wideband silicon germanium RF transistor 1.4 Quick reference data Table
- Unit V V V mA mW fF GHz dBm dB dB dBm [1] Tsp is the temperature at the solder point of the emitter lead. [2] Gp(max) is t
