BGA2869 Datasheet | NXP Semiconductors

MMIC wideband amplifier Rev. 3 - 10 July 2015 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package. 1.2 Features and benefits - Internally matched to 50  - A gain of 31.7 d B at 950 MHz - Output power at 1 d B gain pression = 10 d Bm at 950 MHz - Supply current = 24.0 m A at a supply voltage of 5.0 V - Reverse isolation > 39 d B up to 2150 MHz - Good linearity with low second order and third order products - Noise figure = 3.1 d B at 950 MHz - Unconditionally stable (K > 1) - No output inductor required 1.3 Applications - LNB IF amplifiers - General purpose low noise wideband amplifier for frequencies between DC and 2.2 GHz 2. Pinning information Table 1. Pin 1 2, 5 3 4 6 Pinning Description VCC GND2 RF_OUT GND1 RF_IN Simplified outline Graphic symbol 4 2, 5 sym052 NXP Semiconductors MMIC wideband amplifier 3. Ordering information Table 2. Ordering...