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BGS8M2 Datasheet

Manufacturer: NXP Semiconductors
BGS8M2 datasheet preview

Datasheet Details

Part number BGS8M2
Datasheet BGS8M2-NXP.pdf
File Size 215.96 KB
Manufacturer NXP Semiconductors
Description amplifier MMIC
BGS8M2 page 2 BGS8M2 page 3

BGS8M2 Overview

The BGS8M2 is, also known as the LTE3001M, a Low-Noise Amplifier (LNA) with bypass switch for LTE receiver applications, available in a small plastic 6-pin extremely thin leadless package. The BGS8M2 requires one external matching inductor. The BGS8M2 delivers system-optimized gain for both primary and diversity applications where sensitivity improvement is required.

BGS8M2 Key Features

  • Operating frequency from 1805 MHz to 2200 MHz
  • Noise figure = 0.85 dB
  • Gain 14.4 dB
  • High input 1 dB pression point of -3.5 dBm
  • Bypass switch insertion loss of 2.2 dB
  • High in band IP3i of 3.5 dBm
  • Supply voltage 1.5 V to 3.1 V
  • Self-shielding package concept
  • Integrated supply decoupling capacitor
  • Optimized performance at a supply current of 5.8 mA

BGS8M2 Applications

  • Operating frequency from 1805 MHz to 2200 MHz
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BGS8M2 Distributor

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